The Toshiba 2SC5446(Q) is a single NPN bipolar junction transistor packaged in a TO-3PL through hole package. It has a maximum collector-emitter voltage of 600V and a maximum collector current of 18A. The transistor is made of silicon material and has a minimum DC current gain of 10 at a collector current of 2A and a base current of 5V. The operating temperature range is from -55°C to 150°C.
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| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1700V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum DC Collector Current | 18A |
| Maximum Power Dissipation | 200mW |
| Material | Si |
| Minimum DC Current Gain | 10@2A@5V|6@9A@5V|4@14A@5V |
| Maximum Transition Frequency | 1.7(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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