The Toshiba 2SC5570(FA) is a TO-3PL through hole NPN bipolar junction transistor with a maximum collector-emitter voltage of 800V and a maximum collector current of 28A. It has a maximum power dissipation of 220W and operates within a temperature range of -55°C to 150°C. The transistor is made of silicon material and has a minimum current gain of 22 at various current and voltage conditions.
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Toshiba 2SC5570(FA) technical specifications.
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1700V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 800V |
| Maximum DC Collector Current | 28A |
| Maximum Power Dissipation | 220000mW |
| Material | Si |
| Minimum DC Current Gain | 22@2A@5V|12.5@8A@5V|4.5@22A@5V |
| Maximum Transition Frequency | 2(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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