The Toshiba 2SC5570 is a single NPN bipolar power transistor packaged in a TO-3PL through hole package. It has a maximum collector-emitter voltage of 800V and a maximum collector current of 28A. The transistor has a maximum power dissipation of 220mW and a maximum operating temperature of 150°C. The device is made from silicon material and has a minimum DC current gain of 22 at various current and voltage conditions.
Sign in to ask questions about the Toshiba 2SC5570(IYAM1,Q) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SC5570(IYAM1,Q) technical specifications.
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 1700V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 800V |
| Maximum DC Collector Current | 28A |
| Maximum Power Dissipation | 220000mW |
| Material | Si |
| Minimum DC Current Gain | 22@2A@5V|12.5@8A@5V|4.5@22A@5V |
| Maximum Transition Frequency | 2(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Toshiba 2SC5570(IYAM1,Q) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
