The Toshiba 2SC5695(NANAO) is a single NPN bipolar junction transistor with a maximum collector-emitter voltage of 700V and a maximum DC collector current of 22mA. It is packaged in a TO-3PL package with a 5.45mm pitch and is designed for through-hole mounting. The transistor is made of silicon material and has a minimum DC current gain of 50. It is suitable for use in a variety of applications where a high voltage and moderate current are required.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba 2SC5695(NANAO) technical specifications.
General
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 700V |
| Maximum DC Collector Current | 22A |
| Material | Si |
| Minimum DC Current Gain | 50(Max) |
Compliance
| Cage Code | S0562 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SC5695(NANAO) Datasheet
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