NPN Darlington transistor for surface mount applications, featuring a 3-pin configuration within a New PW-Mold package (TO-252AB). This single-element transistor offers a maximum collector-emitter voltage of 80V and a continuous DC collector current of 4A, with a power dissipation of 1000mW. Key specifications include a minimum DC current gain of 1000 at 3A/2V and a wide operating temperature range from -55°C to 150°C.
Sign in to ask questions about the Toshiba 2SD1223(TE16R) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SD1223(TE16R) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Continuous DC Collector Current | 4A |
| Maximum Power Dissipation | 1000mW |
| Maximum Base Emitter Saturation Voltage | 2@6mA@3AV |
| Maximum Collector-Emitter Saturation Voltage | 1.5@6mA@3AV |
| Minimum DC Current Gain | 1000@3A@2V|2000@1A@2V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SD1223(TE16R) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
