The Toshiba 2SD2406-Y(F) is a TO-220-3 packaged NPN bipolar junction transistor with a maximum collector current of 30uA and a maximum power dissipation of 25W. It has a collector-emitter breakdown voltage of 80V and an operating temperature range of -55°C to 150°C. This lead-free transistor is suitable for high-frequency applications, with a transition frequency of 8MHz and a gain bandwidth product of 8MHz.
Frequency8MHz
PackageTO-220-3
MountingThrough Hole
PolarityNPN
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Technical Specifications
Toshiba 2SD2406-Y(F) technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 8MHz |
| Gain Bandwidth Product | 8MHz |
| Lead Free | Lead Free |
| Max Collector Current | 30uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 25W |
| Transition Frequency | 8MHz |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SD2406-Y(F) Datasheet
Download the complete datasheet for Toshiba 2SD2406-Y(F) to view detailed technical specifications.
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