NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage and 3A continuous collector current. Offers a maximum power dissipation of 1800mW. This single-element transistor is housed in a 3-pin TPL (Single In Line Package) with plastic construction. Operates across a temperature range of -55°C to 150°C.
PackageTPL
MountingThrough Hole
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Technical Specifications
Toshiba 2SD2525(TPDNGIK) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
SIP
Package/Case
TPL
Package Description
Single In Line Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
13.4
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
60V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
60V
Maximum DC Collector Current
3A
Maximum Power Dissipation
1800mW
Material
Si
Minimum DC Current Gain
[email protected]@5V|20@2A@5V
Maximum Transition Frequency
3(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SD2525(TPDNGIK) Datasheet
Download the complete datasheet for Toshiba 2SD2525(TPDNGIK) to view detailed technical specifications.
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