NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 60V collector-emitter voltage, 3A continuous collector current, and 1800mW power dissipation. Housed in a 3-pin Single In Line Package (SIP) with plastic construction. Operates across a temperature range of -55°C to 150°C.
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Toshiba 2SD2525(TPMURATA) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | SIP |
| Package/Case | TPL |
| Package Description | Single In Line Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 13.4 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 7V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 1800mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V|20@2A@5V |
| Maximum Transition Frequency | 3(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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