The Toshiba 2SD2539(LB306MAF,M is a single NPN transistor with a maximum collector-emitter voltage of 600V and a maximum continuous DC collector current of 7A. It has a maximum power dissipation of 50W and a minimum DC current gain of 8 at 1A and 5V. The transistor is packaged in a TO-3P(HIS) package with a seated plane height of 29mm and a weight of 5.5g. It is designed for through-hole mounting and has a maximum operating temperature range of -55°C to 150°C.
PackageTO-3P(HIS)
MountingThrough Hole
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Technical Specifications
Toshiba 2SD2539(LB306MAF,M technical specifications.
General
| Package/Case | TO-3P(HIS) |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 16.5 |
| Seated Plane Height (mm) | 29 |
| Package Weight (g) | 5.5 |
| Mounting | Through Hole |
| Jedec | SC-65 |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage | 600V |
| Maximum Continuous DC Collector Current | 7000mA |
| Maximum Power Dissipation | 50000mW |
| Maximum Base Emitter Saturation Voltage | 1.3@1A@5AV |
| Maximum Collector-Emitter Saturation Voltage | 5@1A@5AV |
| Minimum DC Current Gain | 8@1A@5V|5@5A@5V |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SD2539(LB306MAF,M Datasheet
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