NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features an 80V collector-emitter voltage and a 4A maximum DC collector current. This single-element silicon transistor is housed in a TO-220AB package with 3 pins and a tab, designed for through-hole mounting. It offers a minimum DC current gain of 120 at 0.5A and 5V, with a maximum power dissipation of 30000mW and an operating temperature up to 150°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SD526-Y(Z) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 8.6(Max) |
| Seated Plane Height (mm) | 20.9(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 80V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 4A |
| Maximum Power Dissipation | 30000mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@5V |
| Maximum Transition Frequency | 8(Typ)MHz |
| Category | Bipolar Power |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SD526-Y(Z) Datasheet
Download the complete datasheet for Toshiba 2SD526-Y(Z) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.