The Toshiba 2SJ200(LBP4KENW) is a single enhancement P-channel MOSFET packaged in a TO-3PN transistor outline package. It has a maximum drain source voltage of 180V and a maximum continuous drain current of 10A. The device is designed for through hole mounting and has a maximum power dissipation of 120mW. The operating temperature range is from -55°C to 150°C.
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| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 180V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 10A |
| Material | Si |
| Typical Input Capacitance @ Vds | 1300@30VpF |
| Maximum Power Dissipation | 120000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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