The 2SJ349(F,T) is a P-channel transistor from Toshiba, packaged in a TO-220-3 case and available in bulk quantities. It features a maximum continuous drain current of 20A and a drain to source breakdown voltage of -60V. The device has a maximum power dissipation of 45W and a drain to source resistance of 45mR. It can operate at a gate to source voltage of up to 20V and has an input capacitance of 2.8nF. The transistor is suitable for through-hole mounting.
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| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.8nF |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Bulk |
| Polarity | P-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 45mR |
| RoHS | Compliant |
