P-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 20A. Features a low on-resistance of 45mΩ at 10V, typical gate charge of 90nC at 10V, and input capacitance of 2800pF at 10V. Housed in a 3-pin TO-220NIS through-hole package with a maximum power dissipation of 45W. Operates within a temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SJ349(LBS4DNGIK) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Package Weight (g) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 20A |
| Material | Si |
| Maximum Drain Source Resistance | 45@10VmOhm |
| Typical Gate Charge @ Vgs | 90@10VnC |
| Typical Gate Charge @ 10V | 90nC |
| Typical Input Capacitance @ Vds | 2800@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SJ349(LBS4DNGIK) Datasheet
Download the complete datasheet for Toshiba 2SJ349(LBS4DNGIK) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.