P-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes L2-pi-MOS V process technology and is housed in a 3-pin New PW-Mold surface-mount package with tab. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 190mΩ at 10V, and a maximum power dissipation of 20W. Operating temperature range is -55°C to 150°C.
PackageNew PW-Mold
MountingSurface Mount
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Technical Specifications
Toshiba 2SJ377(T6LPP) technical specifications.
General
Package/Case
New PW-Mold
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
5.5
Package Height (mm)
2.3
Package Weight (g)
0.36
Mounting
Surface Mount
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
L2-pi-MOS V
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
190@10VmOhm
Typical Gate Charge @ Vgs
22@10VnC
Typical Gate Charge @ 10V
22nC
Typical Input Capacitance @ Vds
630@10VpF
Maximum Power Dissipation
20000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ377(T6LPP) Datasheet
Download the complete datasheet for Toshiba 2SJ377(T6LPP) to view detailed technical specifications.
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