P-channel enhancement mode silicon power MOSFET featuring a 60V maximum drain-source voltage and 5A maximum continuous drain current. This single-element transistor is housed in a 3-pin TPS package with through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key electrical characteristics include a maximum drain-source on-resistance of 190mΩ at 10V, typical gate charge of 22nC at 10V, and typical input capacitance of 630pF at 10V. Maximum power dissipation is 1300mW, with an operating temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ378(TPCANO) technical specifications.
General
| Package Family Name | TPS |
| Package/Case | TPS |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 7 |
| Package Weight (g) | 0.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SJ378(TPCANO) Datasheet
Download the complete datasheet for Toshiba 2SJ378(TPCANO) to view detailed technical specifications.
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