P-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 5A continuous drain current. This single-element transistor is housed in a 3-pin TPS package for through-hole mounting, measuring 8mm x 3.5mm x 7mm. It offers a maximum drain-source resistance of 190mΩ at 10V, with a typical gate charge of 22nC and input capacitance of 630pF. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 1300mW.
Sign in to ask questions about the Toshiba 2SJ378(TPNALD) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SJ378(TPNALD) technical specifications.
| Package Family Name | TPS |
| Package/Case | TPS |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 7 |
| Package Weight (g) | 0.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 190@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 630@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SJ378(TPNALD) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
