P-channel enhancement mode silicon power MOSFET featuring a 60V maximum drain-source voltage and 5A maximum continuous drain current. This single-element transistor is housed in a 3-pin TPS package with through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key electrical characteristics include a maximum drain-source on-resistance of 190mOhm at 10V, typical gate charge of 22nC at 10V, and typical input capacitance of 630pF at 10V. Maximum power dissipation is 1300mW, with an operating temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ378(TPPP) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
190@10VmOhm
Typical Gate Charge @ Vgs
22@10VnC
Typical Gate Charge @ 10V
22nC
Typical Input Capacitance @ Vds
630@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ378(TPPP) Datasheet
Download the complete datasheet for Toshiba 2SJ378(TPPP) to view detailed technical specifications.
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