P-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 20A continuous drain current. This single-element transistor utilizes pi-MOS V process technology and is housed in a TO-220FL package with 3 pins and a tab, suitable for through-hole mounting. Key specifications include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 45mΩ at 10V, and a maximum power dissipation of 100W. Operating temperature range is -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ401(TE24R) technical specifications.
General
Package Family Name
TO-220
Package/Case
TO-220FL
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.3(Max)
Package Width (mm)
4.7(Max)
Package Height (mm)
9.1
Seated Plane Height (mm)
13.1(Max)
Package Weight (g)
1.5
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Process Technology
pi-MOS V
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Gate Threshold Voltage
2V
Maximum Drain Source Resistance
45@10VmOhm
Typical Gate Charge @ Vgs
90@10VnC
Typical Gate Charge @ 10V
90nC
Typical Input Capacitance @ Vds
2800@10VpF
Maximum Power Dissipation
100000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SJ401(TE24R) Datasheet
Download the complete datasheet for Toshiba 2SJ401(TE24R) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.