P-channel enhancement mode silicon power MOSFET featuring a 50V maximum drain-source voltage and 5A maximum continuous drain current. This single-element transistor is housed in a 3-pin TO-92 Mod plastic package with through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance of 190 mOhm at 10V, typical gate charge of 18 nC, and typical input capacitance of 470 pF at 10V. Maximum power dissipation is 900 mW, with an operating temperature range of -55°C to 150°C.
PackageTO-92 Mod
MountingThrough Hole
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Technical Specifications
Toshiba 2SJ537(F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92 Mod
Package Description
Plastic Header Style Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Length (mm)
5.1(Max)
Package Width (mm)
4.1(Max)
Package Height (mm)
8.2(Max)
Seated Plane Height (mm)
10.4(Max)
Package Weight (g)
0.36
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-92
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
50V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
190@10VmOhm
Typical Gate Charge @ Vgs
18@10VnC
Typical Gate Charge @ 10V
18nC
Typical Input Capacitance @ Vds
470@10VpF
Maximum Power Dissipation
900mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SJ537(F) Datasheet
Download the complete datasheet for Toshiba 2SJ537(F) to view detailed technical specifications.
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