P-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 250V and a continuous drain current of 2A. Features a TO-252AB (New PW-Mold) surface mount package with 3 pins (2+Tab) and a maximum power dissipation of 20000mW. Operating temperature range is -55°C to 150°C.
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Toshiba 2SJ610(T6L1TOLT,N) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 2550@10VmOhm |
| Typical Gate Charge @ Vgs | 24@10VnC |
| Typical Gate Charge @ 10V | 24nC |
| Typical Input Capacitance @ Vds | 381@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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