The Toshiba 2SK1061(TPE4) is a single enhancement mode N-channel MOSFET with a maximum drain source voltage of 60V and a maximum continuous drain current of 0.2A. It features a maximum power dissipation of 300mW and operates over a temperature range of -55°C to 150°C. The device is mounted through a hole and has a typical input capacitance of 55pF at 10V. It is constructed from silicon and has a maximum drain source resistance of 1000 ohms at 10V.
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| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 4.2(Max) |
| Package Width (mm) | 2.6(Max) |
| Package Height (mm) | 3.2(Max) |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.2A |
| Material | Si |
| Maximum Drain Source Resistance | 1000@10VmOhm |
| Typical Input Capacitance @ Vds | 55@10VpF |
| Maximum Power Dissipation | 300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | No |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba 2SK1061(TPE4) to view detailed technical specifications.
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