The Toshiba 2SK1118(S4IDM) is a single N-channel enhancement power MOSFET with a maximum drain source voltage of 600V and a maximum continuous drain current of 6A. It is made of silicon material and has a maximum power dissipation of 45W. The device operates over a temperature range of -55°C to 150°C. It is suitable for use in power electronics applications where high voltage and current handling are required.
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Toshiba 2SK1118(S4IDM) technical specifications.
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6A |
| Material | Si |
| Maximum Drain Source Resistance | 1250@10VmOhm |
| Typical Gate Charge @ Vgs | 56@10VnC |
| Typical Gate Charge @ 10V | 56nC |
| Typical Input Capacitance @ Vds | 1400@10VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Download the complete datasheet for Toshiba 2SK1118(S4IDM) to view detailed technical specifications.
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