N-channel Silicon Power MOSFET, TO-220AB package, through-hole mounting. Features 1000V drain-source voltage, 4A continuous drain current, and ±20V gate-source voltage. Single element configuration with enhancement mode channel. Maximum drain-source resistance is 3800 mOhm at 10V. Operating temperature range from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Toshiba 2SK1119(LBMIE2) technical specifications.
General
| Package/Case | TO-220AB |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9(Max) |
| Package Weight (g) | 2 |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Drain Source Resistance | 3800@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 700@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK1119(LBMIE2) Datasheet
Download the complete datasheet for Toshiba 2SK1119(LBMIE2) to view detailed technical specifications.
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