N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 9A continuous drain current. This single element silicon transistor utilizes pi-MOS II.5 process technology and is housed in a TO-3PN package with 3 through-hole pins and a tab. Key specifications include a maximum gate-source voltage of ±30V, a maximum drain-source on-resistance of 1400mΩ at 10V, and a maximum power dissipation of 150W. Operating temperature range is -55°C to 150°C.
PackageTO-3PN
MountingThrough Hole
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Technical Specifications
Toshiba 2SK1358(SHRPB) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-3PN
Package/Case
TO-3PN
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
15.9(Max)
Package Width (mm)
4.5
Package Height (mm)
19
Seated Plane Height (mm)
22
Pin Pitch (mm)
5.45
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS II.5
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
9A
Material
Si
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Resistance
1400@10VmOhm
Typical Gate Charge @ Vgs
120@10VnC
Typical Gate Charge @ 10V
120nC
Typical Input Capacitance @ Vds
1300@25VpF
Maximum Power Dissipation
150000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK1358(SHRPB) Datasheet
Download the complete datasheet for Toshiba 2SK1358(SHRPB) to view detailed technical specifications.
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