N-channel enhancement mode silicon power MOSFET featuring a 100V drain-source voltage and 60A continuous drain current. This through-hole component is housed in a TO-3PL package with a 3-pin configuration and tab. Key specifications include a maximum power dissipation of 200W, a low drain-source on-resistance of 20mΩ at 10V, and a typical gate charge of 176nC at 10V. Operating temperature range spans from -55°C to 150°C.
PackageTO-3PL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK1382(PAIRSONY) technical specifications.
General
| Package/Case | TO-3PL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 20 |
| Package Width (mm) | 5 |
| Package Height (mm) | 26 |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Material | Si |
| Maximum Drain Source Resistance | 20@10VmOhm |
| Typical Gate Charge @ Vgs | 176@10VnC |
| Typical Gate Charge @ 10V | 176nC |
| Typical Input Capacitance @ Vds | 7000@10VpF |
| Maximum Power Dissipation | 200000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK1382(PAIRSONY) Datasheet
Download the complete datasheet for Toshiba 2SK1382(PAIRSONY) to view detailed technical specifications.
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