The 2SK170-BL(MATUS) is a TO-92 packaged N-channel JFET transistor from Toshiba. It features a maximum operating temperature range of -55°C to 125°C and a maximum power dissipation of 400mW. The device is mounted through a hole and is constructed from silicon material. It has a maximum drain gate voltage of -40V and a seated plane height of 6.5mm.
Sign in to ask questions about the Toshiba 2SK170-BL(MATUS) datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Toshiba 2SK170-BL(MATUS) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-92 |
| Package/Case | TO-92 |
| Package Description | Plastic Header Style Package |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 5.1(Max) |
| Package Width (mm) | 4.1(Max) |
| Package Height (mm) | 4.7(Max) |
| Seated Plane Height (mm) | 4.7(Max) + 1.8 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-92 |
| Channel Type | N |
| Configuration | Single |
| Maximum Drain Gate Voltage | -40V |
| Material | Si |
| Maximum Power Dissipation | 400mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 125°C |
| Cage Code | S0562 |
| EU RoHS | No |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Toshiba 2SK170-BL(MATUS) to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
