N-channel enhancement mode silicon power MOSFET, TO-220FL package, featuring 1000V drain-source voltage and 4A continuous drain current. This single-element transistor offers a maximum drain-source resistance of 3800 mOhm at 10V, with a typical gate charge of 60 nC at 10V. The component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 100W.
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| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 1000V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 4A |
| Material | Si |
| Maximum Drain Source Resistance | 3800@10VmOhm |
| Typical Gate Charge @ Vgs | 60@10VnC |
| Typical Gate Charge @ 10V | 60nC |
| Typical Input Capacitance @ Vds | 700@25VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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