N-channel enhancement mode silicon power MOSFET, designed for surface mount applications. Features a 100V drain-source voltage, 3A continuous drain current, and 350mOhm maximum drain-source resistance at 10V. Housed in a 3-pin TO-252AB (New PW-Mold) package with dimensions of 6.5mm x 5.5mm x 2.3mm. Operates across a temperature range of -55°C to 150°C, with a maximum power dissipation of 20W.
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Toshiba 2SK2201(TE16L1,N) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Gate Charge @ Vgs | 13.5@10VnC |
| Typical Gate Charge @ 10V | 13.5nC |
| Typical Input Capacitance @ Vds | 280@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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