N-channel enhancement mode power MOSFET, featuring a 100V drain-source voltage and 3A continuous drain current. This single-element silicon transistor is housed in a TO-252AB (New PW-Mold) surface-mount package with 3 pins and a tab. Key specifications include a maximum drain-source on-resistance of 350mΩ at 10V, typical gate charge of 13.5nC at 10V, and typical input capacitance of 280pF at 10V. Maximum power dissipation is 20W, with an operating temperature range of -55°C to 150°C.
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Toshiba 2SK2201(TE16R1,N) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Seated Plane Height (mm) | 2.4 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 3A |
| Material | Si |
| Maximum Drain Source Resistance | 350@10VmOhm |
| Typical Gate Charge @ Vgs | 13.5@10VnC |
| Typical Gate Charge @ 10V | 13.5nC |
| Typical Input Capacitance @ Vds | 280@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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