N-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 5A. Features a low drain-source on-resistance of 160mΩ at 10V. Packaged in a 3-pin TPS (Through Hole) package with dimensions of 8mm x 3.5mm x 7mm. Operates within a temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2229(Q) technical specifications.
General
| Package Family Name | TPS |
| Package/Case | TPS |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 8 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 7 |
| Package Weight (g) | 0.54 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 12@10VnC |
| Typical Gate Charge @ 10V | 12nC |
| Typical Input Capacitance @ Vds | 370@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Toshiba 2SK2229(Q) Datasheet
Download the complete datasheet for Toshiba 2SK2229(Q) to view detailed technical specifications.
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