N-channel enhancement mode power MOSFET featuring 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TPS package with through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key electrical characteristics include a maximum drain-source on-resistance of 160 mOhm at 10V, typical gate charge of 12 nC, and typical input capacitance of 370 pF. Maximum power dissipation is 1300 mW, with an operating temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2229(TPNALD) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
160@10VmOhm
Typical Gate Charge @ Vgs
12@10VnC
Typical Gate Charge @ 10V
12nC
Typical Input Capacitance @ Vds
370@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2229(TPNALD) Datasheet
Download the complete datasheet for Toshiba 2SK2229(TPNALD) to view detailed technical specifications.
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