N-channel enhancement mode power MOSFET featuring a 60V drain-source voltage and 5A continuous drain current. This single-element silicon transistor offers a low on-resistance of 160mΩ at 10V, with a typical gate charge of 12nC at 10V and input capacitance of 370pF at 10V. Housed in a 3-pin TPS package with through-hole mounting, it has a maximum power dissipation of 1300mW and operates across a temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2229(TPND) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
160@10VmOhm
Typical Gate Charge @ Vgs
12@10VnC
Typical Gate Charge @ 10V
12nC
Typical Input Capacitance @ Vds
370@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2229(TPND) Datasheet
Download the complete datasheet for Toshiba 2SK2229(TPND) to view detailed technical specifications.
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