N-channel enhancement mode silicon power MOSFET featuring a 60V drain-source voltage and 5A continuous drain current. This single-element transistor is housed in a 3-pin TPS package with through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key electrical characteristics include a maximum drain-source on-resistance of 160mΩ at 10V, typical gate charge of 12nC, and typical input capacitance of 370pF at 10V. Maximum power dissipation is 1300mW, with an operating temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2229(TPNHE) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
60V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
160@10VmOhm
Typical Gate Charge @ Vgs
12@10VnC
Typical Gate Charge @ 10V
12nC
Typical Input Capacitance @ Vds
370@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2229(TPNHE) Datasheet
Download the complete datasheet for Toshiba 2SK2229(TPNHE) to view detailed technical specifications.
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