N-channel enhancement mode power MOSFET, silicon, featuring a maximum drain-source voltage of 60V and a continuous drain current of 45A. This single-element transistor utilizes pi-MOS V process technology and is housed in a 3-pin TO-220FL package with through-hole mounting. Key specifications include a maximum drain-source on-resistance of 17 mΩ at 10V, typical gate charge of 110 nC at 10V, and typical input capacitance of 3350 pF at 10V. Maximum power dissipation is 100W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FL
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2376(T4LMBSH) technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FL |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 9.1 |
| Seated Plane Height (mm) | 13.1(Max) |
| Package Weight (g) | 1.5 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS V |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 45A |
| Material | Si |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Drain Source Resistance | 17@10VmOhm |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Typical Gate Charge @ 10V | 110nC |
| Typical Input Capacitance @ Vds | 3350@10VpF |
| Maximum Power Dissipation | 100000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2376(T4LMBSH) Datasheet
Download the complete datasheet for Toshiba 2SK2376(T4LMBSH) to view detailed technical specifications.
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