N-channel enhancement mode power MOSFET, silicon material, featuring a 100V maximum drain-source voltage and 5A maximum continuous drain current. This single-element transistor is housed in a 3-pin (2+Tab) New PW-Mold package (TO-252AB) for surface mounting, with dimensions of 6.5mm x 5.5mm x 2.3mm. It offers a maximum drain-source on-resistance of 230mOhm at 10V, typical gate charge of 22nC at 10V, and typical input capacitance of 500pF at 10V. Maximum power dissipation is 20000mW, with an operating temperature range of -55°C to 150°C.
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Toshiba 2SK2399(PP) technical specifications.
| Package/Case | New PW-Mold |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 5.5 |
| Package Height (mm) | 2.3 |
| Package Weight (g) | 0.36 |
| Mounting | Surface Mount |
| Jedec | TO-252AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 230@10VmOhm |
| Typical Gate Charge @ Vgs | 22@10VnC |
| Typical Gate Charge @ 10V | 22nC |
| Typical Input Capacitance @ Vds | 500@10VpF |
| Maximum Power Dissipation | 20000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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