N-channel enhancement mode power MOSFET featuring a 100V drain-source voltage and 5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TPS package for through-hole mounting, measuring 8mm x 3.5mm x 7mm. Key specifications include a maximum gate-source voltage of ±20V, a drain-source on-resistance of 230mΩ at 10V, and a maximum power dissipation of 1300mW. Operating temperature range spans from -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2400(TPYNS) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
230@10VmOhm
Typical Gate Charge @ Vgs
22@10VnC
Typical Gate Charge @ 10V
22nC
Typical Input Capacitance @ Vds
500@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2400(TPYNS) Datasheet
Download the complete datasheet for Toshiba 2SK2400(TPYNS) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.