2SK2545(LBS2HYUD)

N-channel enhancement mode silicon power MOSFET with a maximum drain-source voltage of 600V and a continuous drain current of 6A. Features a low drain-source on-resistance of 1250mΩ at 10V, typical gate charge of 30nC at 10V, and typical input capacitance of 1300pF at 10V. This single-element transistor is housed in a 3-pin TO-220NIS through-hole package with a pin pitch of 2.54mm, offering a maximum power dissipation of 40W and operating temperature range of -55°C to 150°C.