2SK2545(LBS2MBS,Q)

N-channel enhancement mode power MOSFET featuring 600V drain-source voltage and 6A continuous drain current. This single element silicon transistor utilizes pi-MOS V process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum drain-source on-resistance of 1250 mOhm at 10V, typical gate charge of 30 nC at 10V, and typical input capacitance of 1300 pF at 10V. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.