N-channel enhancement mode power MOSFET featuring a 500V drain-source voltage and 2A continuous drain current. This single-element silicon transistor is housed in a 3-pin TPS through-hole package with a 2.5mm pin pitch. Key specifications include a maximum gate-source voltage of ±30V, 3200mΩ drain-source resistance at 10V, and 9nC typical gate charge. The component offers a maximum power dissipation of 1300mW and operates across a temperature range of -55°C to 150°C.
PackageTPS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2599(TPMDNSI1) technical specifications.
General
Package Family Name
TPS
Package/Case
TPS
Pin Count
3
PCB
3
Package Length (mm)
8
Package Width (mm)
3.5
Package Height (mm)
7
Seated Plane Height (mm)
8.5
Pin Pitch (mm)
2.5
Package Weight (g)
0.54
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain Source Voltage
500V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
2A
Material
Si
Maximum Drain Source Resistance
3200@10VmOhm
Typical Gate Charge @ Vgs
9@10VnC
Typical Gate Charge @ 10V
9nC
Typical Input Capacitance @ Vds
380@10VpF
Maximum Power Dissipation
1300mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Toshiba 2SK2599(TPMDNSI1) Datasheet
Download the complete datasheet for Toshiba 2SK2599(TPMDNSI1) to view detailed technical specifications.
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