The 2SK2601 is a 500V N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 125W and a maximum drain to source voltage of 500V. The device is packaged in a 3-pin SC-65 package and is rated for a continuous drain current of 10A. It is not radiation hardened and is not RoHS compliant.
Current Rating10A
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2601 technical specifications.
General
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.2nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | No |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Toshiba 2SK2601 Datasheet
Download the complete datasheet for Toshiba 2SK2601 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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