2SK2605(LBS2SONY)

N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 2200 mOhm at 10V, typical gate charge of 34 nC at 10V, and typical input capacitance of 1080 pF at 25V. Maximum power dissipation is 45000 mW, with an operating temperature range from -55°C to 150°C.