N-channel enhancement mode power MOSFET featuring 800V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum gate-source voltage of ±30V, 2200mOhm drain-source resistance at 10V, and a typical gate charge of 34nC at 10V. Maximum power dissipation is 45000mW, with an operating temperature range of -55°C to 150°C.
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Toshiba 2SK2605(SONY1,Q) technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS III |
| Maximum Drain Source Voltage | 800V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 5A |
| Material | Si |
| Maximum Drain Source Resistance | 2200@10VmOhm |
| Typical Gate Charge @ Vgs | 34@10VnC |
| Typical Gate Charge @ 10V | 34nC |
| Typical Input Capacitance @ Vds | 1080@25VpF |
| Maximum Power Dissipation | 45000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
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