N-channel enhancement mode silicon power MOSFET, surface mountable in a 4-pin PW-Mini (SOT) package. Features a maximum drain-source voltage of 60V and a continuous drain current of 2A. Offers a low drain-source on-resistance of 300mΩ at 10V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1500mW.
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Toshiba 2SK2615(T2LNILES) technical specifications.
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Package Weight (g) | 0.05 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 300@10VmOhm |
| Typical Gate Charge @ Vgs | 6@10VnC |
| Typical Gate Charge @ 10V | 6nC |
| Typical Input Capacitance @ Vds | 150@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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