N-channel enhancement mode power MOSFET, silicon, featuring a maximum drain-source voltage of 60V and a continuous drain current of 2A. This single-element transistor is housed in a compact 4-pin (3+Tab) PW-Mini surface-mount package with a maximum package length of 4.6mm. Key electrical characteristics include a maximum drain-source on-resistance of 300mΩ at 10V, typical gate charge of 6nC at 10V, and typical input capacitance of 150pF at 10V. Maximum power dissipation is rated at 1500mW, with an operating temperature range from -55°C to 150°C.
PackagePW-Mini
MountingSurface Mount
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Technical Specifications
Toshiba 2SK2615(T2LTOYOG) technical specifications.
General
| Package Family Name | SOT |
| Package/Case | PW-Mini |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 4.6(Max) |
| Package Width (mm) | 2.5 |
| Package Height (mm) | 1.6(Max) |
| Seated Plane Height (mm) | 1.6(Max) |
| Package Weight (g) | 0.05 |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2A |
| Material | Si |
| Maximum Drain Source Resistance | 300@10VmOhm |
| Typical Gate Charge @ Vgs | 6@10VnC |
| Typical Gate Charge @ 10V | 6nC |
| Typical Input Capacitance @ Vds | 150@10VpF |
| Maximum Power Dissipation | 1500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2615(T2LTOYOG) Datasheet
Download the complete datasheet for Toshiba 2SK2615(T2LTOYOG) to view detailed technical specifications.
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