Transistors Bipolar - BJT N-Ch FET RDS 0.5 Ohm IDSS 100uA VDS 600V
Resistance0.5R
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2699(F,T) technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 2.6nF |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 650mR |
| Resistance | 0.5R |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba 2SK2699(F,T) Datasheet
Download the complete datasheet for Toshiba 2SK2699(F,T) to view detailed technical specifications.
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