N-channel enhancement mode silicon power MOSFET designed for through-hole mounting. Features a maximum drain-source voltage of 600V and a continuous drain current of 12A. Housed in a TO-3PN package with 3 pins plus a tab, offering a maximum power dissipation of 150W. Typical gate charge is 58nC at 10V, with input capacitance of 2600pF at 10V. Operating temperature range spans from -55°C to 150°C.
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Toshiba 2SK2699(HISH) technical specifications.
| Package Family Name | TO-3PN |
| Package/Case | TO-3PN |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 15.9(Max) |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 19 |
| Seated Plane Height (mm) | 23.6(Max) |
| Pin Pitch (mm) | 5.45 |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 12A |
| Material | Si |
| Maximum Drain Source Resistance | 650@10VmOhm |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Typical Gate Charge @ 10V | 58nC |
| Typical Input Capacitance @ Vds | 2600@10VpF |
| Maximum Power Dissipation | 150000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
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