N-channel enhancement mode power MOSFET featuring a 900V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a 3-pin TO-220NIS through-hole package with a tab. Key specifications include a maximum drain-source on-resistance of 2500 mOhm at 10V, typical gate charge of 45nC at 10V, and typical input capacitance of 1200pF at 25V. Maximum power dissipation is 45W, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
Quick Jump:
Technical Specifications
Toshiba 2SK2717(COSEL,F) technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220NIS
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10
Package Width (mm)
4.5
Package Height (mm)
15
Seated Plane Height (mm)
15 + 5.6(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
pi-MOS III
Maximum Drain Source Voltage
900V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
5A
Material
Si
Maximum Drain Source Resistance
2500@10VmOhm
Typical Gate Charge @ Vgs
45@10VnC
Typical Gate Charge @ 10V
45nC
Typical Input Capacitance @ Vds
1200@25VpF
Maximum Power Dissipation
45000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
S0562
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Toshiba 2SK2717(COSEL,F) Datasheet
Download the complete datasheet for Toshiba 2SK2717(COSEL,F) to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.