2SK2717(MURATA1F,T

N-CH MOSFET 900V 5A TO-220 Power Transistor

N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and offers a low on-resistance of 2500 mOhm at 10V. Packaged in a TO-220NIS through-hole configuration with 3 pins and a tab, it supports a maximum power dissipation of 45W and operates within a -55°C to 150°C temperature range.

PackageTO-220NIS

MountingThrough Hole

Quick Jump:

Technical Specifications

Toshiba 2SK2717(MURATA1F,T technical specifications.

General

Basic Package Type	Through Hole
Package Family Name	TO-220
Package/Case	TO-220NIS
Package Description	Transistor Outline Package
Lead Shape	Through Hole
Pin Count	3
PCB	3
Tab	Tab
Package Length (mm)	10
Package Width (mm)	4.5
Package Height (mm)	15
Seated Plane Height (mm)	15 + 5.6(Max)
Pin Pitch (mm)	2.54
Package Material	Plastic
Mounting	Through Hole
Configuration	Single
Category	Power MOSFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Process Technology	pi-MOS III
Maximum Drain Source Voltage	900V
Maximum Gate Source Voltage	±30V
Maximum Continuous Drain Current	5A
Material	Si
Maximum Drain Source Resistance	2500@10VmOhm
Typical Gate Charge @ Vgs	45@10VnC
Typical Gate Charge @ 10V	45nC
Typical Input Capacitance @ Vds	1200@25VpF
Maximum Power Dissipation	45000mW
Min Operating Temperature	-55°C
Max Operating Temperature	150°C

Compliance

Cage Code	S0562
EU RoHS	Yes
HTS Code	8541290095
Schedule B	8541290080
ECCN	EAR99
Automotive	No
AEC Qualified	No
PPAP	No
Radiation Hardening	No
RoHS Versions	2002/95/EC

Datasheet

This datasheet cannot be embedded due to technical restrictions.

View Datasheet Download PDF