2SK2718(MURATA,Q)

N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 2.5A continuous drain current. This single-element silicon transistor utilizes pi-MOS III process technology and is housed in a TO-220NIS through-hole package with 3 pins and a tab. Key specifications include a maximum drain-source resistance of 6400 mOhm at 10V, typical gate charge of 21 nC at 10V, and typical input capacitance of 510 pF at 25V. Maximum power dissipation is 40000 mW, with an operating temperature range of -55°C to 150°C.