N-channel enhancement mode power MOSFET featuring 900V drain-source voltage and 2.5A continuous drain current. This through-hole component utilizes a TO-220NIS package with 3 pins and a tab, constructed from plastic. Key specifications include a maximum drain-source resistance of 6400 mOhm at 10V, typical gate charge of 21 nC at 10V, and typical input capacitance of 510 pF at 25V. Maximum power dissipation is 40W, with an operating temperature range of -55°C to 150°C.
PackageTO-220NIS
MountingThrough Hole
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Technical Specifications
Toshiba 2SK2718(SC) technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220NIS |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 15 + 5.6(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | pi-MOS III |
| Maximum Drain Source Voltage | 900V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 2.5A |
| Material | Si |
| Maximum Drain Source Resistance | 6400@10VmOhm |
| Typical Gate Charge @ Vgs | 21@10VnC |
| Typical Gate Charge @ 10V | 21nC |
| Typical Input Capacitance @ Vds | 510@25VpF |
| Maximum Power Dissipation | 40000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | S0562 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Toshiba 2SK2718(SC) Datasheet
Download the complete datasheet for Toshiba 2SK2718(SC) to view detailed technical specifications.
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